Green-function approach to transport through a gate-surrounded Si nanowire with impurity scattering

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 3, 2008, Pages

  Oh, Jung Hyun ^a   Ahn, D ^a   Yu, Y S ^b   Hwang, S W ^c  

^a University of Seoul   (South Korea)

^b Hankyong National University   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 38349089650     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.035313     Document Type: Article

References (27)

1. T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, and G. J. Davies, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.56.1198 56, 1198 (1986).
2. K. K. Choi, D. C. Tsui, and S. C. Palmateer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.32.5540 32, 5540 (1985).
3. B. J. van Wees, H. van Houten, C. W. J. Beenakker, and J. G. Williamson, L. P. Kouwenhoven, D. van der Marel, and C. T. Foxon, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.60.848 60, 848 (1988).
4. L. DiCarlo, Y. Zhang, D. T. McClure, D. J. Reilly, C. M. Marcus, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 97.036810 97, 036810 (2006).
5. K. Nishiguchi and S. Oda, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126517 76, 2922 (2000).
6. K. H. Cho, Y. C. Jung, B. H. Hong, S. W. Hwang, J. H. Oh, D. Ahn, S. D. Suk, K. H. Yeo, D. Kim, D. Park, and W. S. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2734490 90, 182102 (2007);
7. K. H. Cho, S. D. Suk, Y. Y. Yeoh, M. Li, K. H. Yeo, D. Kim, S. W. Hwang, D. Park, and B. Ryu, Tech. Dig. - Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 543.
8. M. V. Fernandez-Serra, Ch. Adessi, and X. Blase, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.166805 96, 166805 (2006);
9. M. V. Fernandez-Serra, Ch. Adessi, and X. Blase, Nano Lett. NALEFD 1530-6984 10.1021/nl0614258 6, 2674 (2006).
10. J. Masek, Z. Phys. B: Condens. Matter ZPCMDN 0722-3277 10.1007/BF01303695 64, 145 (1986).
11. Ben Yu-Kuang Hu and S. Das Sarma, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.14388 48, 14388 (1993);
12. H. Sakaki, Jpn. J. Appl. Phys. JJAPA5 0021-4922 10.1143/JJAP.19.L735 19, L 735 (1980).
13. R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. S. Lundstrom, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1563298 93, 5613 (2003).
14. J. Wang, E. Polizzi, and M. Lundstrom, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1769089 96, 2192 (2004).
15. A. Kamenev and A. Andreev, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.60.2218 60, 2218 (1999).
16. H. E. Camblong and P. M. Levy, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.69.2835 69, 2835 (1992).
17. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365394 81, 7845 (1996).
18. M. Diarra, Y. M. Niquet, C. Delerue, and G. Allan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.75.045301 75, 045301 (2007).
19. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997).
20. J. H. Oh, D. Ahn, and S. W. Hwang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.165348 72, 165348 (2005).
21. H. K. Gummel, IEEE Trans. Electron Devices IETDAI 0018-9383 11, 455 (1964);
22. M. Shin (private communication).
23. E. O. Johnson, RCA Rev. RCARCI 0033-6831 34, 80 (1973).
24. J. H. Oh, D. Ahn, and S. W. Hwang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.205403 68, 205403 (2003).
25. G. Ingold and Y. V. Nazarov, in Single Charge Tunneling, edited by, H. Grabert, and, M. H. Devoret, (Plenum, New York, 1992).
26. R. A. Smith, Semiconductors (Cambridge University Press, Cambridge, 1978).
27. W. T. Masselink, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 66.1513 66, 1513 (1991).