-
1
-
-
1442360362
-
-
10.1016/j.sse.2003.12.020
-
J.-P. Colinge, Solid-State Electron. 48, 897 (2004). 10.1016/j.sse.2003. 12.020
-
(2004)
Solid-State Electron.
, vol.48
, pp. 897
-
-
Colinge, J.-P.1
-
3
-
-
34347245893
-
Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
-
DOI 10.1088/0957-4484/18/25/255201, PII S0957448407419961
-
M. Bescond, N. Cavassilas, and M. Lannoo, Nanotechnology 18, 255201 (2007). 10.1088/0957-4484/18/25/255201 (Pubitemid 46996214)
-
(2007)
Nanotechnology
, vol.18
, Issue.25
, pp. 255201
-
-
Bescond, M.1
Cavassilas, N.2
Lannoo, M.3
-
5
-
-
70350054841
-
-
10.1109/TED.2009.2028382
-
C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, IEEE Trans. Electron Devices 56, 2186 (2009). 10.1109/TED.2009.2028382
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, pp. 2186
-
-
Buran, C.1
Pala, M.G.2
Bescond, M.3
Dubois, M.4
Mouis, M.5
-
6
-
-
33947147843
-
Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations
-
DOI 10.1063/1.2711275
-
M. Luisier, A. Schenk, and W. Fitchner Appl. Phys. Lett. 90, 102103 (2007). 10.1063/1.2711275 (Pubitemid 46398423)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.10
, pp. 102103
-
-
Luisier, M.1
Schenk, A.2
Fichtner, W.3
-
7
-
-
79251566182
-
-
10.1063/1.3540689
-
M. Luisier, Appl. Phys. Lett. 98, 032111 (2011). 10.1063/1.3540689
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 032111
-
-
Luisier, M.1
-
10
-
-
77949766990
-
-
10.1063/1.3352558
-
N. Cavassilas, N. Pons, F. Michelini, and M. Bescond, Appl. Phys. Lett. 96, 102102 (2010). 10.1063/1.3352558
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 102102
-
-
Cavassilas, N.1
Pons, N.2
Michelini, F.3
Bescond, M.4
-
12
-
-
0043210202
-
-
10.1103/PhysRev.97.869
-
J. M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955). 10.1103/PhysRev.97.869
-
(1955)
Phys. Rev.
, vol.97
, pp. 869
-
-
Luttinger, J.M.1
Kohn, W.2
-
13
-
-
70349314728
-
-
10.1109/TNANO.2009.2020980
-
A. Martinez, N. Seoane, A. R. Brown, J. R. Barker, and A. Asenov, IEEE Trans. Nanotechnol. 8, 603 (2009). 10.1109/TNANO.2009.2020980
-
(2009)
IEEE Trans. Nanotechnol.
, vol.8
, pp. 603
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
Barker, J.R.4
Asenov, A.5
-
14
-
-
67650127116
-
-
10.1109/TED.2009.2021357
-
N. Seoane, A. Martinez, A. R. Brown, J. R. Barker, and A. Asenov, IEEE Trans. Electron Devices 56, 1388 (2009). 10.1109/TED.2009.2021357
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, pp. 1388
-
-
Seoane, N.1
Martinez, A.2
Brown, A.R.3
Barker, J.R.4
Asenov, A.5
-
15
-
-
59549089304
-
-
10.1103/PhysRevLett.102.036801
-
G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, Phys. Rev. Lett. 102, 036801 (2009). 10.1103/PhysRevLett.102.036801
-
(2009)
Phys. Rev. Lett.
, vol.102
, pp. 036801
-
-
Mil'Nikov, G.1
Mori, N.2
Kamakura, Y.3
Ezaki, T.4
-
16
-
-
77952710208
-
-
10.1143/JJAP.49.04DC19
-
Y. Kamakura, G. Mil'nikov, N. Mori, and K. Taniguchi, Jpn. J. Appl. Phys. 49, 04DC19 (2010). 10.1143/JJAP.49.04DC19
-
(2010)
Jpn. J. Appl. Phys.
, vol.49
-
-
Kamakura, Y.1
Mil'Nikov, G.2
Mori, N.3
Taniguchi, K.4
-
17
-
-
77954033701
-
-
10.1109/TED.2010.2048405
-
A. Martinez, N. Seoane, A. R. Brown, J. R. Barker, and A. Asenov, IEEE Trans. Electron Devices 57, 1626 (2010). 10.1109/TED.2010.2048405
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, pp. 1626
-
-
Martinez, A.1
Seoane, N.2
Brown, A.R.3
Barker, J.R.4
Asenov, A.5
-
18
-
-
80052405455
-
-
in (Beijing)
-
M. Bescond, M. Lannoo, F. Michelini, L. Raymond, and M. G. Pala, in 13th Proceedings of the International Workshop on Computational Electronics (Beijing, 2009), p. 137-140.
-
(2009)
13th Proceedings of the International Workshop on Computational Electronics
, pp. 137-140
-
-
Bescond, M.1
Lannoo, M.2
Michelini, F.3
Raymond, L.4
Pala, M.G.5
-
19
-
-
79251481116
-
-
10.1063/1.3399999
-
M. Bescond, M. Lannoo, L. Raymond, and F. Michelini, J. Appl. Phys. 107, 093703 (2010). 10.1063/1.3399999
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 093703
-
-
Bescond, M.1
Lannoo, M.2
Raymond, L.3
Michelini, F.4
|