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Microelectronics Journal

Volumn 40, Issue 4-5, 2009, Pages 756-758

3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

(5) Bescond, M a Lannoo, M a Michelini, F a Raymond, L b Pala, M G b

a AIX MARSEILLE UNIVERSITÉ (France)

b IMEP LAHC (France)

Author keywords

Doping impurity; Green's function; Nanowire transistors; Quantum transport; Simulation

Indexed keywords

DIFFERENTIAL EQUATIONS; DRAIN CURRENT; GREEN'S FUNCTION; INTEGRATED CIRCUITS; MOSFET DEVICES; NANOWIRES; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

3D POISSON EQUATIONS; ACCEPTOR DOPING; DOPING IMPURITY; INTRINSIC FLUCTUATIONS; METAL-OXIDE SEMICONDUCTORS; MOS TRANSISTORS; NANO-TRANSISTORS; NANOWIRE TRANSISTORS; NON-EQUILIBRIUM GREEN FUNCTIONS; NUMERICAL STUDIES; ON-ELECTRON DENSITIES; QUANTUM TRANSPORT; QUANTUM TRANSPORT SIMULATIONS; REAL SPACES; SILICON NANOWIRES; SIMULATION; THREE-DIMENSIONAL (3D); TRANSMISSION COEFFICIENTS; TUNNELING EFFECTS;

TRANSISTORS;

EID: 63749086892 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.11.009 Document Type: Article

Times cited : (3)

References (7)

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- Delerue, C.¹ Lannoo, M.²

5
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- Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET
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6
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- M. Bescond, M.G. Pala, C. Buran, F. Michelini, L. Raymond, under preparation, available on request
- M. Bescond, M.G. Pala, C. Buran, F. Michelini, L. Raymond, under preparation, available on request.

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- Nehari, K.¹ Cavassilas, N.² Michelini, F.³ Bescond, M.⁴ Autran, J.L.⁵ Lannoo, M.⁶

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