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Volumn 2, Issue 4, 2012, Pages 587-592

Preparation and low-temperature sintering of Cu nanoparticles for high-power devices

Author keywords

Cu nanoparticles; high temperature device; lead free; low temperature sintering; pulsed wire evaporation

Indexed keywords

BONDED INTERFACE; CROSS-SECTION ANALYSIS; CU NANOPARTICLES; ELECTRICAL RESISTANCES; FORMING GAS; HIGH TEMPERATURE ELECTRONIC DEVICES; HIGH-POWER DEVICES; HIGH-TEMPERATURE DEVICES; HIGH-TEMPERATURE ELECTRONICS; IN-SITU; INTERCONNECT MATERIALS; LEAD-FREE; LOW-TEMPERATURE SINTERING; ORGANIC MIXTURES; OXIDE REDUCTION; SILICON DIE;

EID: 84859748632     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2012.2189208     Document Type: Article
Times cited : (44)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.