Bonding parameters of blanket copper wafer bonding

Journal of Electronic Materials

Volumn 35, Issue 2, 2006, Pages 230-234

  Chen, K N ^a,b   Fan, A ^a   Tan, C S ^a   Reif, R ^a  

^a Massachusetts Institute of Technology   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Bonding parameters; Copper; Three dimensional (3 D) integration; Wafer bonding

Indexed keywords

BONDING PARAMETERS; THREE-DIMENSIONAL (3-D) INTEGRATION; WAFER BONDING;

ANNEALING; BONDING; NITROGEN; WSI CIRCUITS;

COPPER;

EID: 33644891053     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02692440     Document Type: Conference Paper

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