Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3

Journal of Crystal Growth

Volumn 292, Issue 1, 2006, Pages 155-158

  Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PLASMA SPRAYING; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; HIGH ELECTRON MOBILITY; SAPPHIRE SUBSTRATES; SEMICONDUCTING MATERIALS;

SAPPHIRE;

EID: 33745676574     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.085     Document Type: Article

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