Hexagonal BN epitaxial growth on (0 0 0 1) sapphire substrate by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5044-5047

  Kobayashi, Y ^a   Akasaka, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A1. Crystal structure; A3. Low pressure metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

BORON; CORUNDUM; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; SULFUR COMPOUNDS; VAPORS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

A1. CRYSTAL STRUCTURE; A3. LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; BN FILMS; HEXAGONAL BORON NITRIDES; METAL ORGANIC; RAMAN MODES; SAPPHIRE SUBSTRATES; TURBOSTRATIC; V/III RATIOS; X-RAY DIFFRACTIONS;

BORON NITRIDE;

EID: 56249093100     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.010     Document Type: Article

References (10)

1. Rand M.J., and Roberts J.F. J. Electrochem. Soc. 115 (1968) 423
2. Murarka S.P., Chang C.C., Wang D.N.K., and Smith T.E. J. Electrochem. Soc. 126 (1979) 1951
3. Motojima S., Tamura Y., and Sugiyama K. Thin Solid Films 88 (1982) 269
4. Thomas Jr. J., Weston N.E., and Oconnor T.E. J. Am. Chem. Soc. 84 (1963) 4619
5. Kobayashi Y., Nakamura T., Akasaka T., Makimoto T., and Matsumoto N. J. Crystal Growth 298 (2007) 325
6. Kobayashi Y., Nakamura T., Akasaka T., Makimoto T., and Matsumoto N. Phys. Stat. Sol. (b) 244 (2007) 1789
7. Nakamura K. J. Electrochem. Soc. 133 (1986) 1120
8. Geick R., and Perry C.H. Phys. Rev. 146 (1966) 543
9. Hoffman D.M., Doll G.L., and Eklund P.C. Phys. Rev. B 30 (1984) 6051
10. Kuzuba T., Sato Y., Yamaoka S., and Era K. Phys. Rev. B 18 (1978) 4440