MOCVD of BN and GaN thin films on silicon: New attempt of GaN growth with BN buffer layer

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 439-444

  Boo, Jin Hyo ^a   Rohr, Carsten ^b   Ho, Wilson ^b  

^a Sungkyunkwan University   (South Korea)

^b Cornell University   (United States)

Author keywords

h BN buffer layer; h GaN thin film; Single source precursor; Supersonic jet epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; BORON COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY CRYSTALLOGRAPHY;

SINGLE SOURCE PRECURSORS; SUPERSONIC JET EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032090909     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00323-6     Document Type: Article

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