Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

Nanotechnology

Volumn 23, Issue 17, 2012, Pages

  Schramm, A ^a   Tommila, J ^a   Strelow, C ^b   Hakkarainen, T V ^a   Tukiainen, A ^a   Dumitrescu, M ^a   Mews, A ^b   Kipp, T ^b   Guina, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; GAAS; INAS QUANTUM DOTS; LARGE ARRAYS; MICROPHOTOLUMINESCENCE; QUANTUM DOT ARRAYS; SINGLE EXCITONS; SINGLE QUANTUM DOT; TIME-RESOLVED; UV NANOIMPRINT LITHOGRAPHY;

EPITAXIAL GROWTH; EXPERIMENTS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOIMPRINT LITHOGRAPHY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84859617764     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/17/175701     Document Type: Article

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