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Volumn 70, Issue 3, 2004, Pages

Radiatively limited dephasing in InAs quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; INDIUM;

EID: 42749106806     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.033301     Document Type: Article
Times cited : (214)

References (23)
  • 18
    • 33646645766 scopus 로고    scopus 로고
    • note
    • The presence of additional dephasing processes that have the same scaling with the oscillator strength cannot be excluded. Phonon-assisted processes, however, would scale differently.
  • 20
    • 33646658001 scopus 로고    scopus 로고
    • note
    • xAs QDs embedded in a different sample structure (Refs. 4 and 6), where a linear increase was measured at low temperatures.
  • 23
    • 33646650542 scopus 로고    scopus 로고
    • note
    • The In diffusion length is much smaller than the in-plane QD diameter of 10-20 nm, and affects only the In distribution along the growth direction, since the QD height is only few nanometers.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.