The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Nanotechnology

Volumn 19, Issue 50, 2008, Pages

  Balzarotti, Adalberto ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GROWTH (MATERIALS); GROWTH KINETICS; INDIUM ARSENIDE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; OSTWALD RIPENING; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM WIRES; THREE DIMENSIONAL;

DATA ANALYSIS; GAAS(001); INAS/GAAS; KINETIC MODELS; QUANTUM DOTS; SURFACE FEATURES; VOLUME DENSITIES; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT;

ARTICLE; DATA ANALYSIS; DENSITY; EVOLUTION; GROWTH; KINETICS; MOLECULAR ELECTRONICS; PRIORITY JOURNAL; QUANTITATIVE ANALYSIS;

EID: 58149265157     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/50/505701     Document Type: Article

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