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Volumn 97, Issue 17, 2010, Pages

Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

(7) Hakkarainen, T V a Tommila, J a Schramm, A a Tukiainen, A a Ahorinta, R a Dumitrescu, M a Guina, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED GROWTH; GAAS; GAAS SUBSTRATES; IN-PLANE; INAS QUANTUM DOTS; OPTICAL QUALITIES; PATTERN ORIENTATION; QUANTUM DOT CHAINS; STRUCTURAL AND OPTICAL PROPERTIES; UV NANOIMPRINT LITHOGRAPHY; WAVE-GUIDING;

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOIMPRINT LITHOGRAPHY; NANOPHOTONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL PROPERTIES;

EID: 78149423450 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3506903 Document Type: Article

Times cited : (26)

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