Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography

Applied Physics Letters

Volumn 76, Issue 2, 2000, Pages 167-169

  Ishikawa, Tomonori ^a   Nishimura, Tetsuya ^a   Kohmoto, Shigeru ^a   Asakawa, Kiyoshi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000338540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125691     Document Type: Article

References (12)

1. R. Murray, D. Childs, S. Malik, P. Siverns, C. Roberts, J-M. Hartmann, and P. Stavrinou, Jpn. J. Appl. Phys., Part 1 38, 528 (1999).
2. K. Nishi, H. Saito, S. Sugou, and J-S. Lee, Appl. Phys. Lett. 74, 1111 (1999).
3. T. Ishikawa, S. Kohmoto, and K. Asakawa, Appl. Phys. Lett. 73, 1712 (1998).
4. T. Ishikawa, Jpn. J. Appl. Phys., Part 1 35, 5583 (1996).
5. Y. Horikoshi, H. Yamaguchi, F. Briones, and M. Kawashima, J. Cryst. Growth 105, 326 (1990).
6. M. Hata, T. Isu, A. Watanabe, and Y. Katayama, Appl. Phys. Lett. 56, 2542 (1990).
7. D. J. Arent, S. Nilsson, Y. D. Galeuchet, H. P. Meier, and W. Walter, Appl. Phys. Lett. 55, 2611 (1989).
8. N. Ikoma and S. Ohkouchi, Jpn. J. Appl. Phys., Part 2 34, L724 (1995).
9. R. Leon, T. J. Senden, Y. Kim, C. Jagadish, and A. Clark, Phys. Rev. Lett. 78, 4942 (1997).
10. M. Kitamura, M. Nishioka, J. Oshinowo, and Y. Arakawa, Appl. Phys. Lett. 66, 3663 (1995).
11. M. Kasu, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 70, 1161 (1997).
12. S. Kohmoto, H. Nakamura, T. Ishikawa, and K. Asakawa, Appl. Phys. Lett. 75, 3488 (1999).