Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP

Nanoscale Research Letters

Volumn 5, Issue 12, 2010, Pages 1892-1896

  Hakkarainen, Teemu ^a   Schramm, Andreas ^a   Tukiainen, Antti ^a   Ahorinta, Risto ^a   Toikkanen, Lauri ^a   Guina, Mircea ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

GaInP; III V semiconductors; InAs; Molecular beam epitaxy; Ordering; Quantum dots

Indexed keywords

GAINP; II-IV SEMICONDUCTORS; INAS; ORDERING; QUANTUM DOT;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78649758911     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9747-2     Document Type: Article

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