SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

Electroforming and Ohmic contacts in Al-Al 2O 3-Ag diodes

(1) Hickmott, T W a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM PENTABORATE; APPLIED VOLTAGES; CONDUCTING CHANNELS; DEFECT CONDUCTION; F CENTERS; HIGH-FIELD; HIGH-RESISTANCE STATE; HOLE INJECTION; I - V CURVE; LOW TEMPERATURES; LOW-RESISTANCE STATE; METAL INSULATOR METALS; NEGATIVE CHARGE; NON DESTRUCTIVE; POSITIVE CHARGES; RECOMBINATION CENTERS; RESISTANCE SWITCHING; VALENCE BAND STATE; VOLTAGE-CONTROLLED;

AMMONIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CONTACTORS; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROLUMINESCENCE; ELECTROMETALLURGY; ELECTRON INJECTION; ETHYLENE GLYCOL; IONIZATION; MIM DEVICES; OHMIC CONTACTS; SILVER;

ALUMINUM;

EID: 84859524827 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3695456 Document Type: Article

Times cited : (14)

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