Reverse resistance switching in polycrystalline Nb2O5 films

Thin Solid Films

Volumn 518, Issue 20, 2010, Pages 5676-5678

  Jo, Younghun ^a   Sim, Hyunjun ^b   Hwang, Hyunsang ^b   Ahn, Ken ^c   Jung, Myung Hwa ^d  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^d Sogang University   (South Korea)

Author keywords

Magnetic polaron; Niobium oxides; Percolation; Resistance switching

Indexed keywords

HIGH RESISTANCE; LOW RESISTANCE; MAGNETIC POLARONS; NIOBIUM OXIDES; NON-VOLATILE; PERCOLATION RESISTANCE; PERCOLATION TRANSITION; POLYCRYSTALLINE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SWITCHING VOLTAGES;

NIOBIUM; NIOBIUM OXIDE; POLARONS; RANDOM ACCESS STORAGE; SOLVENTS;

SWITCHING;

EID: 77955402537     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.026     Document Type: Conference Paper

References (23)

1. D. Adler, M.S. Shur, M. Silver, and S.R. Ovshinsky J. Appl. Phys. 51 1980 3289
2. G. Dearnaley, A.M. Stoneham, and D.V. Morgan Rep. Prog. Phys. 33 1970 1129
3. W.R. Hiatt, and T.W. Hickmott Appl. Phys. Lett. 6 1965 106
4. Y. Watanabe Phys. Rev., B 59 1999 11257
5. A. Beck, J.G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer Appl. Phys. Lett. 77 2000 139
6. Y. Watanabe, J.G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S.J. Wind Appl. Phys. Lett. 78 2001 3739
7. S.Q. Liu, N.J. Wu, and A. Ignatiev Appl. Phys. Lett. 76 2000 2749
8. A. Asamitsu, Y. Tomioka, H. Kuwahara, and Y. Tokura Nature 388 1997 50
9. A. Baikalov, Y.Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y.Y. Sun, Y.Y. Xue, and C.W. Chu Appl. Phys. Lett. 83 2003 957
10. J.F. Gibbons, and W.E. Beadle Solid State Electron. 7 1964 785
11. P.E. Schmidt, C. Da'vila, P. Esqueda, and R. Callarotti J. Solid State Chem. 12 1975 293
12. S. Seo, M.J. Lee, D.H. Seo, E.J. Jeoung, D.-S. Suh, Y.S. Joung, I.K. Yoo, I.R. Hwang, S.H. Kim, I.S. Byun, J.-S. Kim, J.S. Choi, and B.H. Park Appl. Phys. Lett. 85 2004 5655
13. F. Argall Solid State Electron. 11 1968 535
14. I. Austin Semiconductor Effects in Amorphous Solids 1970 North Holland Amsterdam p. 477
15. M.J. Rozenberg, I.H. Inoue, and M.J. Sanchez Phys. Rev. Lett. 92 2004 178302
16. P. Lunkenheimer, A. Loidl, C.R. Ottermann, and K. Bange Phys. Rev., B 44 1991 5927
17. P. Lunkenheimer, A. Loidl, C.R. Ottermann, and K. Bange Phys. Rev., B 44 1991 5927
18. N. Noginova, G.B. Loutts, E.S. Gillman, V.A. Atsarkin, and A.A. Verevkin Phys. Rev., B 63 2001 174414
19. M. Uehara, S. Mori, C.H. Chen, and S.W. Cheong Nature 399 1999 560
20. K.H. Ahn, T. Lookman, and A.R. Bishop Nature 428 2004 401
21. N. Mathur, and P.B. Littleood Nature Materials 3 2004 207
22. The scenario implicitly assumes that there exists only one percolating LR path. Otherwise, when one LR path breaks, other LR path would still exist and the materials would show I-V curve for the LR state. Such tendency to have only one conducting path has been observed in an experiment with perovskite manganites [22]. The reduced current within the HR phase after the creation of a percolating LR path may prevent further creation of percolating LR paths.
23. M. Fiebig, K. Miyano, Y. Tomioka, and Y. Tokura Science 280 1998 1925