SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 13, 2012, Pages

Polarization-induced remote interfacial charge scattering in Al 2O 3/AlGaN/GaN double heterojunction high electron mobility transistors

(6) Ji, Dong a Liu, Bing a Lu, Yanwu a Liu, Guipeng b Zhu, Qinsheng b Wang, Zhanguo b

a BEIJING JIAOTONG UNIVERSITY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; DESIGNING STRUCTURES; DOUBLE HETEROJUNCTIONS; ELECTRONIC MOBILITY; FIXED CHARGE DENSITY; INTERFACIAL CHARGE; INTERFACIAL POLARIZATION; REMOTE CHARGE SCATTERING; SCATTERING MECHANISMS; THIN BARRIERS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ALUMINUM; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; POLARIZATION; SCATTERING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84859518503 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3698391 Document Type: Article

Times cited : (29)

References (19)

1
- 0035278797
- Very-high power density AlGaN/GaN HEMTs
- DOI 10.1109/16.906455, PII S0018938301015349
- Y.-F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 586 (2001). 10.1109/16.906455 (Pubitemid 32271178)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.3 , pp. 586-590
- Wu, Y.-F.¹ Kapolnek, D.² Ibbetson, J.P.³ Parikh, P.⁴ Keller, B.P.⁵ Mishra, U.K.⁶

2
- 0842277372
- 10.1063/1.109775
- M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993). 10.1063/1.109775
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1214
- Asif Khan, M.¹ Bhattarai, A.² Kuznia, J.N.³ Olson, D.T.⁴

3
- 80155187629
- 10.1063/1.3653805
- T.-H. Hung, M. Esposto, and S. Rajan, Appl. Phys. Lett. 99, 162104 (2011). 10.1063/1.3653805
- (2011) Appl. Phys. Lett. , vol.99 , pp. 162104
- Hung, T.-H.¹ Esposto, M.² Rajan, S.³

4
- 78650654052
- 10.1063/1.3521258
- Y. Cao, H. Xing, and D. Jena, Appl. Phys. Lett. 97, 222116 (2009). 10.1063/1.3521258
- (2009) Appl. Phys. Lett. , vol.97 , pp. 222116
- Cao, Y.¹ Xing, H.² Jena, D.³

5
- 33746281113
- Band offsets of high K gate oxides on III-V semiconductors
- DOI 10.1063/1.2213170
- J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006). 10.1063/1.2213170 (Pubitemid 44102019)
- (2006) Journal of Applied Physics , vol.100 , Issue.1 , pp. 014111
- Robertson, J.¹ Falabretti, B.²

6
- 20844440321
- 3 gate dielectrics on GaAs grown by atomic layer deposition
- DOI 10.1063/1.1899745, 152904
- M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafesson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 86, 152904 (2005). 10.1063/1.1899745 (Pubitemid 40861439)
- (2005) Applied Physics Letters , vol.86 , Issue.15 , pp. 1-3
- Frank, M.M.¹ Wilk, G.D.² Starodub, D.³ Gustafsson, T.⁴ Garfunkel, E.⁵ Chabal, Y.J.⁶ Grazul, J.⁷ Muller, D.A.⁸

7
- 29144509765
- 3
- DOI 10.1063/1.2146060, 252104
- M. L. Huang, Y. C. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104 (2005). 10.1063/1.2146060 (Pubitemid 41816133)
- (2005) Applied Physics Letters , vol.87 , Issue.25 , pp. 1-3
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lee, Y.J.⁴ Chang, P.⁵ Kwo, J.⁶ Wu, T.B.⁷ Hong, M.⁸

8
- 27144499264
- High mobility NMOSFET structure with high-κ dielectric
- DOI 10.1109/LED.2005.856707
- M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, R. Gregory, and D. Nguyen, IEEE Electron Device Lett. 26, 713 (2005). 10.1109/LED.2005.856707 (Pubitemid 41488880)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.10 , pp. 713-715
- Passlack, M.¹ Droopad, R.² Rajagopalan, K.³ Abrokwah, J.⁴ Gregory, R.⁵ Nguyen, D.⁶

9
- 0038528479
- 10.1063/1.1572478
- Z. Yu, C. D. Overgaard, R. Droopad, and M. Passlack, Appl. Phys. Lett. 82, 2978 (2003). 10.1063/1.1572478
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2978
- Yu, Z.¹ Overgaard, C.D.² Droopad, R.³ Passlack, M.⁴

10
- 51349167172
- 10.1063/1.2976676
- N. V. Nguyen, O. A. Kirillov, W. Jiang, W. Wang, J. S. Suehle, P. D. Ye, Y. Xuan, N. Goel, K. W. Choi, W. Tsai, and S. Sayan, Appl. Phys. Lett. 93, 082105 (2008). 10.1063/1.2976676
- (2008) Appl. Phys. Lett. , vol.93 , pp. 082105
- Nguyen, N.V.¹ Kirillov, O.A.² Jiang, W.³ Wang, W.⁴ Suehle, J.S.⁵ Ye, P.D.⁶ Xuan, Y.⁷ Goel, N.⁸ Choi, K.W.⁹ Tsai, W.¹⁰ Sayan, S.¹¹

11
- 0001590229
- 10.1063/1.369664
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutamann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999). 10.1063/1.369664
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Dimitrov, R.⁷ Wittmer, L.⁸ Stutamann, M.⁹ Rieger, W.¹⁰ Hilsenbeck, J.¹¹

12
- 80053523545
- 10.1063/1.3645616
- M. Esposto, S. Krishnamoorthy, D. N. Nath, S. Bajaj, T.-H. Huang, and S. Rajan, Appl. Phys. Lett. 99, 133503 (2011). 10.1063/1.3645616
- (2011) Appl. Phys. Lett. , vol.99 , pp. 133503
- Esposto, M.¹ Krishnamoorthy, S.² Nath, D.N.³ Bajaj, S.⁴ Huang, T.-H.⁵ Rajan, S.⁶

13
- 81155125066
- 10.1063/1.3658450
- S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena, Appl. Phys. Lett. 99, 193504 (2011). 10.1063/1.3658450
- (2011) Appl. Phys. Lett. , vol.99 , pp. 193504
- Ganguly, S.¹ Verma, J.² Li, G.³ Zimmermann, T.⁴ Xing, H.⁵ Jena, D.⁶

14
- 0001666951
- 10.1103/PhysRevB.54.16676
- T. Mattila and R. M. Nieminen, Phys. Rev. B 54, 16676 (1996). 10.1103/PhysRevB.54.16676
- (1996) Phys. Rev. B , vol.54 , pp. 16676
- Mattila, T.¹ Nieminen, R.M.²

15
- 80155187629
- 10.1063/1.3653805
- T.-H. Hung, M. Esposto, and S. Rajan, Appl. Phys. Lett. 99, 162104 (2011). 10.1063/1.3653805
- (2011) Appl. Phys. Lett. , vol.99 , pp. 162104
- Hung, T.-H.¹ Esposto, M.² Rajan, S.³

16
- 79955414668
- 10.1063/1.3573794
- Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, and H. Zhou, Appl. Phys. Lett. 98, 163501 (2011). 10.1063/1.3573794
- (2011) Appl. Phys. Lett. , vol.98 , pp. 163501
- Liu, Z.H.¹ Ng, G.I.² Arulkumaran, S.³ Maung, Y.K.T.⁴ Zhou, H.⁵

17
- 34248682740
- 3) on electrical properties in AlGaN/GaN heterostructures
- DOI 10.1143/JJAP.46.547
- N. Maeda, M. Hiroki, N. Watanabe, Y. Oda, H. Yokoyama, T. Yagi, T. Makimoto, T. Enoki, and T. Kobayashi, Jpn. J. Appl. Phys. 46, 547 (2007). 10.1143/JJAP.46.547 (Pubitemid 47252872)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.2 , pp. 547-554
- Maeda, N.¹ Hiroki, M.² Watanabe, N.³ Oda, Y.⁴ Yokoyama, H.⁵ Yagi, T.⁶ Makimoto, T.⁷ Enoki, T.⁸ Kobayashi, T.⁹

18
- 42749096765
- 10.1016/j.sse.2008.01.028
- P. Kordos, D. Gregusova, R. Stoklas, S. Gazi, and J. Novak, Solid-State Electron. 52, 973 (2008). 10.1016/j.sse.2008.01.028
- (2008) Solid-State Electron. , vol.52 , pp. 973
- Kordos, P.¹ Gregusova, D.² Stoklas, R.³ Gazi, S.⁴ Novak, J.⁵

19
- 78650907540
- 10.1063/1.3532967
- B. Liu, Y. W. Lu, G. R. Jin, Y. Zhao, X. L. Wang, Q. S. Zhu, and Z. G. Wang, Appl. Phys. Lett. 97, 262111 (2010). 10.1063/1.3532967
- (2010) Appl. Phys. Lett. , vol.97 , pp. 262111
- Liu, B.¹ Lu, Y.W.² Jin, G.R.³ Zhao, Y.⁴ Wang, X.L.⁵ Zhu, Q.S.⁶ Wang, Z.G.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.