A computationally efficient numerical model of the offset of CMOS-integrated vertical Hall devices

Sensors and Actuators, A: Physical

Volumn 178, Issue , 2012, Pages 1-9

  Kaufmann, T ^a   Vecchi, M C ^b   Ruther, P ^a   Paul, O ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b Micronas GmbH Freiburg   (Germany)

Author keywords

FE simulation; Junction field effect; Offset; Vertical Hall sensor

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPUTATIONALLY EFFICIENT; DEPLETION LAYER; DOPING CONCENTRATION; DOPING PROFILES; FE-SIMULATION; FINITE ELEMENT MODELS; HALL DEVICES; INPUT VOLTAGES; JUNCTION FIELD EFFECTS; LATERAL CONTACT; MULTI-PHYSICS; NANO METER RANGE; NONLINEAR CONTRIBUTIONS; NONLINEAR EFFECT; OFFSET; PROCESS PARAMETERS; QUADRATIC DEPENDENCE; REALISTIC DEVICES; SYNOPSYS; TCAD SIMULATION; VERTICAL HALL SENSORS;

COMPUTATIONAL EFFICIENCY; HALL EFFECT TRANSDUCERS; NUMERICAL MODELS; PHOSPHORUS;

SEMICONDUCTOR DOPING;

EID: 84859436499     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2012.01.024     Document Type: Article

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