3-D silicon vector sensor based on a novel parallel-field Hall microdevice

Sensors and Actuators, A: Physical

Volumn 110, Issue 1-3, 2004, Pages 219-227

  Roumenin, Chavdar ^a   Nikolov, Dimitar ^a   Ivanov, Avgust ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

3 D Hall device; Cross sensitivity; Microsystems; Parallel field Hall sensor

Indexed keywords

AMPEROMETRIC SENSORS; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; FREQUENCY RESPONSE; HALL EFFECT TRANSDUCERS; MAGNETIC COUPLINGS; MAGNETIC FIELD MEASUREMENT; MAGNETOMETERS; SIGNAL TO NOISE RATIO; SILICON ON SAPPHIRE TECHNOLOGY;

3-D HALL DEVICES; CROSS-SENSITIVITY; MICROSYSTEMS; PARALLEL FIELD HALL SENSORS;

SILICON SENSORS;

EID: 0942279304     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.07.010     Document Type: Conference Paper

References (26)

1. C.S. Roumenin, Solid State Magnetic Sensors, Elsevier, Amsterdam, 1994.
2. Roumenin C. Functional magnetic-field microsensors: an overview. Sens. Mater. 5(5):1994;285-300.
3. Paranjape M., Landsberger L.M., Kahrizi M. A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining. Sens. Actuators A. 53:1996;278-283.
4. Paranjape M., Ristic L.J., Allegretto W. Simulation, design and fabrication of a vertical Hall device for two-dimensional magnetic field sensing. Sens. Mater. 4(2):1993;91-101.
5. Haberli A., Schneider M., Malcovati P., Castagnetti R., Maloberti F., Baltes H.P. Two-dimensional magnetic microsensor with on-chip signal processing for contactless angle measurement. IEEE J. Solid State Circuits. 31(12):1996;1902-1907.
6. Zieren V., Middelhoek S. Magnetic-field sensor based on a two-collector transistor structure. Sens. Actuators. 2:1982;251-261.
7. Kordic S., Munter P. Three-dimensional magnetic-field sensors. IEEE Trans. Electron. Devices. 35(6):1988;771-779.
8. Roumenin C.H. Three-dimensional magnetic field vector sensor. Compt. ABS. 42(4):1989;59-62.
9. Roumenin C.H. Parallel-field Hall microsensors: an overview. Sens. Actuators A. 30:1992;77-87.
10. Riccobene C., Gartner K., Wachutka G., Baltes H.P., Fichtner W. Full three-dimensional numerical analysis of multi-collector magnetotransistors with directional sensitivity. Sens. Actuators A. 46-47:1995;289-293.
11. Lin H.-Y., Lei T.F., Jeng J.-J., Pan C.-L., Chang C.-Y. A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry. Sens. Actuators A. 56:1996;233-237.
12. Nagy A., Trujillo H. 3-D magnetic-field sensor using only a pair of terminals. Sens. Actuators A. 58:1998;137-140.
13. C. Schott, R.S. Popovic, Integrated 3D Hall magnetic field sensor, Transducers '99, 7-10 June 1999, Sendai, Japan, vol. 1, pp. 168-171.
14. Roumenin C.H., Dimitrov K., Ivanov A. Integrated vector sensor and magnetic compass using a novel 3D Hall structure. Sens. Actuators A. 92:2001;119-122.
15. Zongsheng L., Yi L., Guangli W., Hao J. A novel integrated 3-D DMOS magnetic vector sensor based on BCD technology. Sens. Actuators A. 21-23:1990;786-789.
16. Roumenin C.H. 2D magnetodiode sensors based on SOS technology. Sens. Actuators A. 54:1996;584-588.
17. Ch.S. Roumenin, P.T. Kostov, Hall effect sensor, Bulg. Patent 37208 (1983).
18. Popovic R.S. The vertical Hall-effect device. IEEE Electron. Dev. Lett. EDL-5(9):1984;357-358.
19. Huiser A.M.J., Baltes H.P. Numerical modeling of vertical Hall-effect devices. IEEE Electron. Dev. Lett. EDL-5(11):1984;482-484.
20. Maenaka K., Ohgusu T., Ishida M., Nakamura T. Novel vertical Hall cells in standard bipolar technology. Electron. Lett. 23(21):1987;1104-1105.
21. Schott C., Burger F., Blanchard H., Chiesi L. Modern integrated silicon Hall sensors. Sens. Rev. 18(4):1998;252-257.
22. R. Steiner, F. Kroener, T. Olbrich, R. Baresch, H. Baltes, Trench Hall device with deep contacts, Digest of Technical Papers of Transducers '99, 7-10 June 1999, Sendai, Japan, vol. 1, pp. 80-83.
23. Roumenin Ch.S., Nikolov D., Ivanov A. Enhancing the sensitivity of Hall microsensor by minority carrier injection. Electron. Lett. 36(16):2000;1375-1376.
24. Ch. Roumenin, D. Nikolov, A. Ivanov, A novel parallel-field Hall microsensor, Digest of Technical Papers of Eurosensors XVI, 15-18 September 2002, Prague, Czech Republic, pp. 545-548.
25. Zheng X., Wu S. General characteristics and current output mode of a MOS magnetic field sensor. Sens. Actuators A. 28:1991;1-5.
26. Baltes H. Future of IC microtransducers. Sens. Actuators A. 56:1996;179-192.