Valence number transition and silicate formation of cerium oxide films on Si(100)

Vacuum

Volumn 86, Issue 10, 2012, Pages 1513-1516

  Mamatrishat, M ^a   Kouda, M ^a   Kakushima, K ^a   Nohira, H ^b   Ahmet, P ^a   Kataoka, Y ^a   Nishiyama, A ^a   Tsutsui, K ^a   Sugii, N ^a   Natori, K ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Band structure; Cerium oxide; High k; Silicate; Valence number; X ray photoelectron spectroscopy

Indexed keywords

CERIUM OXIDES; ENERGY BANDGAPS; HIGH-K; INTERFACE REACTIONS; REACTION ANALYSIS; SI(1 0 0); SILICATE FORMATION; VALENCE BAND OFFSETS; VALENCE NUMBER;

ATOMS; BAND STRUCTURE; CERIUM COMPOUNDS; OXIDE FILMS; OXIDES; PHOTOELECTRONS; SILICATES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WAFERS;

EID: 84859340033     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.02.050     Document Type: Conference Paper

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