CeO2 on Si(111) 7 × 7 and Si(111)-H 1 × 1, an interface study by high-resolution photoelectron spectroscopy

Applied Surface Science

Volumn 148, Issue 3, 1999, Pages 164-170

  Hirschauer, B ^a   Gothelid M ^a   Janin, E ^a   Lu, H ^a   Karlsson, U O ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; CHEMICAL BONDS; CRYSTAL DEFECTS; DIFFUSION; HYDROGEN; NUCLEATION; OXIDATION; OXYGEN; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACES;

CERIUM OXIDE; HIGH RESOLUTION PHOTOELECTRON SPECTROSCOPY; SILICON DANGLING BONDS; SURFACE RECONSTRUCTION;

INTERFACES (MATERIALS);

EID: 0344771045     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00218-4     Document Type: Article

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