Redox molecules for a resonant tunneling barrier in nonvolatile memory

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 1189-1198

  Shaw, Jonathan ^a   Xu, Qianyin ^a   Rajwade, Shantanu ^a   Hou, Tuo Hung ^b   Kan, Edwin Chihchuan ^a  

^a Cornell University   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Nonvolatile memories; redox active molecules; resonant tunneling; self assembled monolayer (SAM)

Indexed keywords

AU NANOCRYSTALS; CHARGE STORAGE; CYCLING ENDURANCE; ELECTRICAL RELIABILITY; FULLERENE MOLECULES; FUTURE DESIGNS; GATE CURRENT; GATE STACKS; HOLE CARRIERS; HYBRID MOLECULAR ELECTRONICS; INSULATION PROPERTY; LAYER-BY-LAYER METHODS; NON-VOLATILE MEMORIES; NUMBER DENSITY; ORDERS OF MAGNITUDE; ORGANIC BARRIERS; ORGANIC LAYERS; ORGANIC-INORGANIC; PROGRAM/ERASE; PROGRAMMING TIME; REDOX MOLECULES; REDOX-ACTIVE; TRANSPORT MECHANISM; TUNNEL BARRIER;

FLASH MEMORY; MOLECULES; PORPHYRINS; RESONANT TUNNELING; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR STORAGE;

DEPOSITION;

EID: 84859217462     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2184797     Document Type: Article

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