Integration of self-assembled redox molecules in flash memory devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 826-834

  Shaw, Jonathan ^a   Zhong, Yu Wu ^b   Hughes, Kevin J ^a   Hou, Tuo Hung ^c   Raza, Hassan ^d   Rajwade, Shantanu ^a   Bellfy, Julie ^e   Engstrom, James R ^a   Abruña, Héctor D ^a   Kan, Edwin Chihchuan ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b INSTITUTE OF CHEMISTRY   (China)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d University of Iowa   (United States)

^e VILLANOVA UNIVERSITY   (United States)

Author keywords

Coulomb blockade effect; high dielectric; nonvolatile memory devices; reductionoxidation (redox) active molecules; self assembled monolayer (SAM)

Indexed keywords

CHARGE NEUTRALITY LEVEL; CHARGE STORAGE; CHARGING ENERGIES; COULOMB BLOCKADE EFFECTS; DEVICE STRUCTURES; DIRECT CONTACT; ENERGY LEVEL; FERMI LEVEL PINNING; FLASH MEMORY DEVICES; GATE STACKS; HOMO-LUMO GAPS; LOWEST UNOCCUPIED MOLECULAR ORBITAL; MEMORY CELL; MEMORY WINDOW; METAL ELECTRODES; MULTI-BITS; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; ORBITAL HYBRIDIZATION; PROGRAM/ERASE; REDOX MOLECULES; REDUCTION-OXIDATION; ROOM TEMPERATURE; SELF-ASSEMBLED; SELF-ASSEMBLED MONOLAYER (SAM); TUNNELING BARRIER;

COULOMB BLOCKADE; ELECTRON ENERGY LEVELS; FLASH MEMORY; MOLECULAR MODELING; MOLECULAR ORBITALS; MOLECULES; NONVOLATILE STORAGE; ORGANIC POLYMERS; PORPHYRINS;

SELF ASSEMBLED MONOLAYERS;

EID: 79952038111     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2097266     Document Type: Article

References (23)

1. T.-H. Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, "Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3103-3109, Dec. 2006.
2. C. Lee, U. Ganguly, V. Narayanan, T.-H. Hou, and E. C. Kan, "Asymmetric electric field enhancement in nanocrystal memories," IEEE Electron Device Lett., vol. 26, no. 12, pp. 879-881, Dec. 2005. (Pubitemid 41825082)
3. L. Perniola, B. De Salvo, G. Ghibaudo, A. F. Para, G. Pananakakis, V. Vidal, T. Baron, and S. A. Lombardo, "Modeling of the programming window distribution in multi-nanocrystal memory," IEEE Trans. Nanotechnol., vol. 2, no. 4, pp. 277-284, Dec. 2003.
4. J. T. Shaw, T.-H. Hou, H. Raza, and E. C. Kan, "Statistical metrology of metal nanocrystal memories with 3-D finite-element analysis," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1729-1735, Aug. 2009.
5. 60 from integrated circuits," Appl. Phys. Lett., vol. 89, no. 25, pp. 253 113-1-253 113-3, Dec. 2006.
6. 2 for memory applications," Appl. Phys. Lett., vol. 83, no. 1, pp. 198-200, Jun. 2003.
7. Q. Li, G. Mathur, M. Homsi, S. Surthi, V. Misra, V. Malinovskii, K. H. Schweikart, L. H. Yu, J. S. Lindsey, Z. M. Liu, R. B. Dabke, A. Yasseri, D. F. Bocian, and W. G. Kuhr, "Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications," Appl. Phys. Lett., vol. 81, no. 8, pp. 1494-1496, Aug. 2002.
8. Q. Li, "Approach towards hybrid silicon/molecular electronics for memory applications," in Electrical and Computer Engineering. Raleigh, NC: North Carolina State Univ., 2004, p. 152.
9. G. Mathur, S. Gowda, Q. Li, S. Surthi, Q. Zhao, and V. Misra, "Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the dependence of retention time on oxide thickness," IEEE Trans. Nanotechnol, vol. 4, no. 2, pp. 278-283, Mar. 2005. (Pubitemid 40429100)
10. S. Kubatkin, A. Danilov, M. Hjort, J. Cornil, J.-L. Bredas, N. Stuhr-Hansen, P. Hedegard, and T. Bjornholm, "Single-electron transistor of a single organic molecule with access to several redox states," Nature, vol. 425, no. 6959, pp. 698-701, Oct. 2003. (Pubitemid 37321322)
11. Z. Liu, A. A. Yasseri, J. S. Lindsey, and D. F. Bocian, "Molecular memories that survive silicon device processing and real-world operation," Science, vol. 302, no. 5650, pp. 1543-1545, Nov. 2003. (Pubitemid 37475692)
12. C. Lee, J. Meteer, V. Narayanan, and E. C. Kan, "Self-assembly of metal nanocrystal on ultra-thin oxide for nonvolatile memory applications," J. Electron. Mater., vol. 34, no. 1, pp. 1-11, Jan. 2005. (Pubitemid 40185258)
13. T.-H. Hou, U. Ganguly, and E. C. Kan, "Fermi-level pinning in nanocrystal memories," IEEE Electron Device Lett., vol. 28, no. 2, pp. 103-106, Feb. 2007. (Pubitemid 46336434)
14. 3 terminal groups," J. Am. Chem. Soc., vol. 127, no. 17, pp. 6300-6310, May 2005. (Pubitemid 40627754)
15. N. W. Ashcroft and N. D. Mermin, Solid State Physics. Fort Worth, TX: Harcourt Brace College, 1976.
16. C. J. Powell and A. Jablonski, "Consistency of calculated and measured electron inelastic mean free paths," J. Vac. Sci. Technol. A., vol. 17, no. 4, pp. 1122-1126, Jul. 1999. (Pubitemid 129649377)
17. J. H. Scofield, "Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV," J. Electron Spectrosc., vol. 8, no. 2, pp. 129-137, 1976.
18. M. G. Grigorov, J. Weber, N. Vulliermet, H. Chermette, and J. M. J. Tronchet, "Numerical evaluation of the internal orbitally resolved chemical hardness tensor: Second order chemical reactivity through thermal density functional theory," J. Chem. Phys., vol. 108, no. 21, pp. 8790-8798, Jun. 1998. (Pubitemid 128598602)
19. M.-S. Liao and S. Scheiner, "Electronic structure and bonding in metal porphyrins, metal = Fe, Co, Ni, Cu, Zn," J. Chem. Phys., vol. 117, no. 1, pp. 205-219, Jul. 2002. (Pubitemid 34789527)
20. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs, L. R. C. Fonseca, A. A. Demkov, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. Garcia, S. G. H. Anderson, K. Moore, H. H. Tseng, C. Capasso, O. Adetutu, D. C. Gilmer, W. J. Taylor, R. Hegde, and J. Grant, "Fermi level pinning with sub-monolayer MeOx and metal gates," in IEDM Tech. Dig., 2003, pp. 13.1.1-13.1.4.
21. J. Tersoff, "Theory of semiconductor heterojunctions: The role of quantum dipoles," Phys. Rev. B, vol. 30, no. 8, pp. 4874-4877, Oct. 1984.
22. S. Lenfant, D. Guerin, F. Tran Van, C. Chevrot, S. Palacin, J. P. Bourgoin, O. Bouloussa, F. Rondelez, and D. Vuillaume, "Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface," J. Phys. Chem., vol. 110, no. 28, pp. 13 947-13 958, Jul. 2006. (Pubitemid 44188061)
23. D. Gryko, J. Z. Li, J. R. Diers, K. M. Roth, D. F. Bocian, W. G. Kuhr, and J. S. Lindsey, "Studies related to the design and synthesis of a molecular octal counter," J. Mater. Chem., vol. 11, no. 4, pp. 1162-1180, Feb. 2001. (Pubitemid 32322774)