Nonvolatile memory with molecule-engineered tunneling barriers

Applied Physics Letters

Volumn 92, Issue 15, 2008, Pages

  Hou, Tuo Hung ^a   Raza, Hassan ^a   Afshari, Kamran ^a   Ruebusch, Daniel J ^a   Kan, Edwin C ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ENERGY GAP; MOLECULAR ORBITALS; NANOCRYSTALS; NONVOLATILE STORAGE; QUENCHING;

CHARGING ENERGY; LOWEST UNOCCUPIED MOLECULAR ORBITAL (LUMO); MONODISPERSIONS; NONVOLATILE MEMORY;

TUNNEL JUNCTIONS;

EID: 42349087925     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2911741     Document Type: Article

References (19)

1. G. Atwood, IEEE Trans. Device Mater. Reliab. 4, 301 (2004).
2. H. Pon, Proceedings of the International Solid-State and Integrated Circuit Technology, (IEEE, New York, 2006), p. 697.
3. C. Lee, A. Gorur-Seetharam, and E. C. Kan, Tech. Dig.-Int. Electron Devices Meet. 2003, 557.
4. T.-H. Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, IEEE Trans. Electron Devices 53, 3095 (2006).
5. T.-H. Hou, C. Lee, V. Narayanan, U. Ganguly, and E. C. Kan, IEEE Trans. Electron Devices 53, 3103 (2006).
6. J. J. Lee and D.-L. Kwong, IEEE Trans. Electron Devices 52, 507 (2005).
7. K. K. Likharev, Appl. Phys. Lett. 73, 2137 (1998).
8. S. J. Baik, S. Choi, U.-I. Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. 2003, 545.
9. P. Blomme, B. Govoreanu, M. Rosmeulen, J. Van Houdt, and K. DeMeyer, IEEE Electron Device Lett., 24, 99 (2003).
10. C. M. Compagnoni, D. Ielmini, A. S. Spinelli, and A. L. Lacaita, IEEE Trans. Electron Devices 52, 2473 (2005).
11. H.-T. Lue, S.-Y. Wang, E.-K. Lai, Y.-H. Shih, S.-C. Lai, L.-W. Yang, K.-C. Chen, J. Ku, K.-Y. Hsieh, R. Liu, and C.-Y. Lu, Tech. Dig.-Int. Electron Devices Meet. 2005, 547.
12. R. Ohba, Y. Mitani, N. Sugiyama, and S. Fujita, Tech. Dig.-Int. Electron Devices Meet. 2006, 959.
13. R. Ohba, Y. Mitani, N. Sugiyama, and S. Fujita, Tech. Dig.-Int. Electron Devices Meet. 2007, 75.
14. T.-H. Hou, U. Ganguly, and E. C. Kan, Appl. Phys. Lett. 89, 253113 (2006).
15. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 46, 1464 (1999).
16. W. Green, S. Gorun, G. Fitzgerald, P. Fowler, A. Ceulemans, and B. Titeca, J. Phys. Chem. 100, 14892 (1996).
17. G. W. J. Beenakker, Phys. Rev. B 44, 1646 (1991).
18. E. Suzuki, D. K. Schroder, and Y. Hayashi, J. Appl. Phys. 60, 3616 (1986).
19. D. Ielmini, A. S. Spinelli, A. L. Lacaita, and A. Modelli, Solid-State Electron. 46, 1749 (2002).