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Volumn 407, Issue 10, 2012, Pages 1467-1471

SiC epitaxy growth using chloride-based CVD

(7) Henry, Anne a Leone, Stefano a Beyer, Franziska C a Pedersen, Henrik a Kordina, Olof a Andersson, Sven a Janzén, Erik a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Chloride; DLTS; Doping; Epitaxy; PL; Silicon carbide

Indexed keywords

CHLORIDE; DEVICE QUALITY; HIGH GROWTH RATE; HIGH-POWER DEVICES; HIGH-VOLTAGES; HYDROGEN CHLORIDE; METHYLTRICHLOROSILANE; PL; PROCESS PARAMETERS; THICK EPITAXIAL;

CHEMICAL VAPOR DEPOSITION; CHLORINE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); EPITAXIAL GROWTH; SILICON CARBIDE;

CHLORINE COMPOUNDS;

EID: 84859157347 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.09.063 Document Type: Conference Paper

Times cited : (18)

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