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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 373-376

Defects in 4H-SiC layers grown by chloride-based epitaxy

(4) Beyer, F C a Pedersen, H a Henry, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Chloride based epitaxy; DLTS; Intrinsic defects; MCTS

Indexed keywords

CHLORINE COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ENERGY GAP; EXCITONS;

DLTS SPECTRA; DONOR-ACCEPTOR PAIRS; FREE EXCITONS; GROWTH PROCESS; HIGH GROWTH RATE; INTRINSIC DEFECTS; MCTS; NITROGEN-BOUND EXCITONS;

SILICON CARBIDE;

EID: 79251588054 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.373 Document Type: Conference Paper

Times cited : (6)

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