Control over memory performance of layer-by-layer assembled metal phthalocyanine multilayers via molecular-level manipulation

Chemistry of Materials

Volumn 24, Issue 6, 2012, Pages 1091-1099

  Koo, Bonkee ^a   Baek, Hyunhee ^a   Cho, Jinhan ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CHARGE TRAP; CYCLIC VOLTAMMOGRAMS; ELECTROCHEMICAL RESPONSE; INDIUM TIN OXIDE; INSULATING LAYERS; IRON PHTHALOCYANINES; KELVIN PROBE FORCE MICROSCOPY; LAYER-BY-LAYER ASSEMBLIES; LAYER-BY-LAYERS; LOW OPERATING VOLTAGE; LOWER-POWER CONSUMPTION; MEMORY PERFORMANCE; METALLIC CENTERS; METALPHTHALOCYANINES; MOLECULAR LEVELS; NON-VOLATILE MEMORIES; ON/OFF CURRENT RATIO; POLY(ALLYLAMINE HYDROCHLORIDE); QUARTZ GLASS; REDOX SITES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; REVERSIBLE RESISTANCE CHANGES; SILICON SUBSTRATES; SWITCHING SPEED;

DYES; ELECTROSTATICS; INDIUM COMPOUNDS; IRON COMPOUNDS; ITO GLASS; MULTILAYER FILMS; MULTILAYERS; NITROGEN COMPOUNDS; PLATINUM; QUARTZ; REDOX REACTIONS; TIN; TIN OXIDES; TUNGSTEN;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84859127514     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm2033959     Document Type: Article

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