Resistance switching properties of sol-gel derived La0.67Ca 0.33MnO3 thin films on F-doped SnO2 conducting glass

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Zhang, Ting ^a   Su, Zhaohui ^a   Chen, Hongju ^a   Ding, Linghong ^a   Zhang, Weifeng ^a  

^a HENAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; COLLOIDS; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; FLUORINE; GELATION; LANTHANUM; MANGANESE COMPOUNDS; SILVER; SWITCHING; THICK FILMS; TIN; TITANIUM COMPOUNDS;

CONDUCTING GLASSES; ELECTROCHEMICAL WORKSTATIONS; HETEROSTRUCTURES; INDUCED RESISTANCES; INTERFACE TRAPS; MULTILEVEL MEMORIES; NON LINEARITIES; RESISTANCE SWITCHING; ROOM TEMPERATURES; SOL - GELS; SPACE-CHARGE-LIMITED CURRENTS; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 55149110964     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3011029     Document Type: Article

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