Schottky barriers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H 2-gas detection

Sensors and Actuators, B: Chemical

Volumn 165, Issue 1, 2012, Pages 104-109

  Zdansky, Karel ^a   Yatskiv, Roman ^a  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

Author keywords

Electrophoretic deposition; Gas sensors; Hydrogen detection; Metal nanoparticles; Schottky diodes; Schottky Mott limit

Indexed keywords

CATALYTIC METALS; COLLOID SOLUTIONS; DEPOSITED METAL; DETECTION LIMITS; ELECTROPHORETIC DEPOSITIONS; FERMI LEVEL PINNING; FORWARD VOLTAGE; GAS DETECTION; HIGH SENSITIVITY; HYDROGEN DETECTION; HYDROGEN SENSOR; INP; LOW-LEAKAGE CURRENT; ORDERS OF MAGNITUDE; RECTIFICATION RATIO; REVERSE MICELLES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SCHOTTKY-MOTT LIMIT; SEMI-CONDUCTOR WAFER; SULFOSUCCINATE; TIME RESPONSE;

BIMETALS; CHEMICAL SENSORS; COLLOIDAL GRAPHITE; DEPOSITION; DIODES; ELECTRIC RECTIFIERS; ELECTROPHORESIS; GALLIUM NITRIDE; GAS DETECTORS; LEAKAGE CURRENTS; METAL NANOPARTICLES; PALLADIUM; PARAFFINS; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SODIUM; SURFACE ACTIVE AGENTS;

HYDROGEN;

EID: 84858709173     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.02.023     Document Type: Article

References (37)

1. M. Block Proc. ECNDT September 25-29, Berlin, Germany 2006 http://www.ndt.net/article/ecndt2006/doc/Tu.2.6.1.pdf
2. M. Yousuf, B. Kuliyev, B. Lalevic, and T.L. Poteat Pd-InP Schottky diode hydrogen sensors Solid-State Electron. 25 1982 753 758 (Pubitemid 12571819)
3. W.C. Liu, H.J. Pan, H.I. Chen, K.W. Lin, S.Y. Chen, and K.H. Yu Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor IEEE Trans. Electron Dev. 48 2001 1938 1944
4. W.C. Liu, H.J. Pan, H.I. Chen, K.W. Lin, and C.K. Wang Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes Jpn. J. Appl. Phys. 40 2001 6254 6259
5. H.I. Chen, Y.I. Chou, and C.Y. Chu A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating Sens. Actuators B 85 2002 10 18
6. H.I. Chen, Y.I. Chou, and C.K. Hsiung Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode Sens. Actuators B 92 2003 6 16
7. H.I. Chen, and Y.I. Chou Evaluation of the perfection of the Pd-InP Schottky interface from the energy viewpoint of hydrogen adsorbates Semicond. Sci. Technol. 19 2004 39 44
8. Y.I. Chou, C.M. Chen, W.C. Liu, and H.I. Chen Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles IEEE Electron Dev. Lett. 26 2005 62 64
9. T. Kimura, H. Hasegawa, T. Sato, and T. Hashizume Sensing mechanism of InP hydrogen sensors using pt Schottky diodes formed by electrochemical process Jpn. J. Appl. Phys. 45 2006 3414 3422 (Pubitemid 43794213)
10. F. Kim, B.P. Ren, C.R. Gila, and S.J. Abernathy Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes Appl. Phys. Lett. 82 2003 739 741
11. O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Spetz, M. Stutzmann, and M. Eickhoff Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes Appl. Phys. Lett. 83 2003 773 775
12. J.R. Huang, W.C. Hsu, Y.J. Chen, T.B. Wang, K.W. Lin, H.I. Chen, and W.C. Liu Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes Sens. Actuators B 117 2006 151 158
13. J.R. Huang, W.C. Hsu, H.I. Chen, and W.C. Liu Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N-2 atmospheres Sens. Actuators B 123 2007 1040 1048
14. S.N. Das, and A.K. Pal Hydrogen sensor based on thin film nanocrystalline n-GaN/Pd Schottky diode J. Phys. D: Appl. Phys. 40 2007 7291 7297 (Pubitemid 350146598)
15. Y. Kokubun, T. Seto, and S. Nakagomi Jpn. J. Appl. Phys. 40 2001 L663 L665
16. J. Schalwig, G. Muller, and U. Karrer Hydrogen response mechanism of Pt-GaN Schottky diodes Appl. Phys. Lett. 80 2002 1222 1224
17. B.S. Kang, S. Kim, F. Ren, B.P. Gila, C.R. Abernathy, and S. Pearton Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection Sens. Actuators B 104 2005 232 236
18. K. Matsuo, N. Negoro, J. Kotani, T. Hashizume, and H. Hasegawa Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure Appl. Surf. Sci. 244 2005 273 276 (Pubitemid 40423714)
19. M. Ali, V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik, and O. Ambacher Pt/GaN Schottky diodes for hydrogen gas sensors Sens. Actuators B 113 2006 797 804 (Pubitemid 43186012)
20. M. Ali, V. Cimalla, V. Lebedev, V. Tilak, P. Sandvik, D.V. Merfeld, and O. Ambacher A study of hydrogen sensing performance of Pt-GaN Schotty diodes IEEE Sens. J. 6 2006 1115 1119
21. F.K. Yam, Z. Hassan, and A.Y. Hudeish The study of Pt Schottky contact on porous GaN for hydrogen sensing Thin Solid Films 515 2007 7337 7341 (Pubitemid 46782912)
22. Y. Irokawa, Y. Sakuma, and T. Sekiguchi Effect of dielectrics on hydrogen detection sensitivity of metal-insulator-semiconductor Pt-GaN diodes Jpn. J. Appl. Phys. 46 2007 7714 7716
23. 2/GaN Schottky diode Sens. Actuators B 129 2008 292 302
24. 3/GaN hydrogen sensor diode Sens. Actuators B 143 2009 192 197
25. D.H. Chen, C.C. Wang, and T.C. Huang Preparation of palladium ultrafine particles in reverse micelles J. Colloid Interface Sci. 210 1999 123 129
26. D.H. Chen, J.J. Yeh, and T.C. Huang Synthesis of platinum ultrafine particles in AOT reverse micelles J. Colloid Interface Sci. 215 1999 159 166
27. M.L. Wu, D.H. Chen, and T.C. Huang Preparation of Pd/Pt bimetallic nanoparticles in water/AOT/isooctane microemulsions J. Colloid Interface Sci. 243 2001 102 108
28. K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, and A. Fojtik Deposition of Pd nanoparticles on InP by electrophoresis: dependence on electrode polarity IEEE Trans. Nanotechnol. 9 2010 355 360
29. 2-gas sensors, in: Proc. 2nd NANOCON International Conference, October 12-14, 2010, Olomouc, Czech Republic, edited by Radek Zboril, published by TANGER Ltd, Ostrava, Czech Republic, 2010, pp. 182-186, ISBN: 978-080-87294-19-2.
30. K. Zdansky Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles Nanoscale Res. Lett. 6 2011 490 (10 pages)
31. K. Zdansky, O. Cernohorsky, R. Yatskiv, Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles, in: 12th International Symposium on Physics of Materials (ISPMA12), September 4-8, 2011, Prague, Czech Republic, in: Physica Acta Polonica, accepted for publication.
32. K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, J. Vanis, F. Kostka, O. Cernohorsky, A. Fojtik, J. Reboun, and J. Cermak Electrophoresis deposition of metal nanoparticles with reverse micelles onto InP Int. J. Mater. Res. 100 2009 1234 1238
33. K. Zdansky, P. Kacerovsky, J. Zavadil, J. Lorincik, and A. Fojtik Layers of metal nanoparticles on semiconductors deposited by electrophoresis from solutions with reverse micelles Nanoscale Res. Lett. 2 2007 450 454 (Pubitemid 47428893)
34. S.M. Sze Physics of Semiconductor Devices 1969 Wiley p. 379 (Chapter 8)
35. K. Barbalace, Periodic Table of Elements, EnvironmentalChemistry.com, 1995-2011. a) http://environmentalchemistry.com/yogi/periodic/Pd.html; b) http://environmentalchemistry.com/yogi/periodic/Pt.html.
36. Basic Parameters at 300K. a) http://www.ioffe.ru/SVA/NSM/Semicond/InP/ basic.html; b) http://www.ioffe.ru/SVA/NSM/Semicond/GaN/basic.html.
37. K. Skucha, Z. Fan, K. Jeon, A. Javey, and B. Boser Palladium/silicon nanowire Schottky barrier-based hydrogen sensors Sens. Actuators B 145 2010 232 238