A study of hydrogen sensing performance of Pt-GaN Schottky diodes

IEEE Sensors Journal

Volumn 6, Issue 5, 2006, Pages 1115-1118

  Ali, Majdeddin ^b   Cimalla, Volker ^b   Lebedev, Vadim ^b   Tilak, Vinayak ^a,c   Sandvik, Peter M ^a,c   Merfeld, Danielle W ^c   Ambacher, Oliver ^b  

^a IEEE

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

GaN; Platinum; Recovery time; Response time; Schottky diodes; Sensitivity

Indexed keywords

BARRIER HEIGHT (BH); RECOVERY TIME; RESPONSE TIME; SYNTHETIC AIR AMBIENT;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; PLATINUM; SCHOTTKY BARRIER DIODES;

CHEMICAL SENSORS;

EID: 33749516602     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.881346     Document Type: Article

References (13)

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