Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-10

  Zdansky, Karel ^a  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

Author keywords

Electrophoresis; GaN; Hydrogen sensor; InP; Metal nanoparticles; Schottky barrier

Indexed keywords

GAN; HYDROGEN SENSOR; INP; METAL NANOPARTICLES; SCHOTTKY BARRIERS;

CHEMICAL SENSORS; COLLOID CHEMISTRY; COLLOIDAL GRAPHITE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RECTIFIERS; ELECTROPHORESIS; GALLIUM NITRIDE; HYDROGEN; NANOPARTICLES; NITROGEN; OHMIC CONTACTS; PALLADIUM; PARAFFINS; SEMICONDUCTOR DIODES;

SCHOTTKY BARRIER DIODES;

EID: 84856043061     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-490     Document Type: Article

References (14)

1. th European Conference on Nondestructive Testing (ECNDT): Sept. 25-29, 2006; Berlin. p.Tu.2.6.1, http://www.schoonoverinc.com/;http://en.foerch.com/;http://www.adixen.com/.
2. Ruths PF, Ashok S, Fonash SJ, Ruths JM: A study of Pd/Si MIS Schottky barrier diode hydrogen detector. IEEE Trans Electron Devices 1981, 28:1003.
3. Chou YI, Chen CM, Liu WC, Chen HI: A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles. IEEE Electron Device Lett 2005, 26:62.
4. Chiu SY, Huang HW, Liang KC, Huang TH, Liu KP, Tsai JH, Lour WS: High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2. Semicond Sci Technol 2009, 24:045007.
5. Skucha K, Fan Z, Jeon K, Javey A, Boser B: Palladium/silicon nanowire Schottky barrier-based hydrogen sensors. Sens Actuators B 2010, 145:232.
6. Zdansky K, Yatskiv R, Grym J, Cernohorsky O, Zavadil J, Kostka F: Study of electrophoretic deposition of Pd metal nanoparticles on InP and GaN crystal semiconductors for H2-gas sensors. In Proc 2nd NANOCON International Conference: Oct 12-14, 2010; Olomouc, Czech Republic. Edited by: Radek Zboril. TANGER Ltd, Ostrava, Czech Republic; 2010:182, ISBN: 978-80-87294-19-2.
7. Zdansky K, Kacerovsky P, Zavadil J, Lorincik J, Fojtik A: Layers of metal nanoparticles on semiconductors deposited by electrophoresis from solutions with reverse micelles. Nanoscale Res Lett 2007, 2:450.
8. Zdansky K, Zavadil J, Kacerovsky P, Lorincik J, Vanis J, Kostka F, Cernohorsky O, Fojtik A, Reboun J, Cermak J: Electrophoresis deposition of metal nanoparticles with reverse micelles onto InP. Int J Mat Res 2009, 100:1234.
9. Hasegawa H: Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of inp and related materials. Jpn J Appl Phys 1999, 38:1098.
10. Periodic Table of Elements. [http://environmentalchemistry.com/yogi/periodic/Pd.html].
11. InP - Indium Phosphid Basic Parameters at 300 K. [http://www.ioffe.ru/SVA/NSM/Semicond/InP/basic.html].
12. GaN - Gallium Nitride Basic Parameters for Wurtzite Crystal Structure. [http://www.ioffe.ru/SVA/NSM/Semicond/GaN/basic.html].
13. Brillson LJ, Mosbacker HL, Hetzer MJ, Strzhemechny Y, Look DC, Cantwell D, Zhang J, Song JJ: Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces. Appl Surf Sci 2008, 254:8000.
14. Skoskiewicz T: Superconductivity in palladium-hydrogen and palladiumnickel-hydrogen systems. Phys Stat Sol (a) 1972, 11:K123.