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Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer

(6) Munguia J a Bluet, J M a Marty, O a Bremond, G a Mermoux, M b Rouchon, D c

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b LEPMI (France)

c CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; BOSE-EINSTEIN EQUATIONS; BULK SILICON; DENSITY OF STATE; ENERGY BANDGAPS; HIGH TEMPERATURE; LOW TEMPERATURES; STRAIN FLUCTUATIONS; STRAINED SILICON; STRAINED SILICON ON INSULATOR; TEMPERATURE DEPENDENCE; ULTRA-THIN;

PHOTOLUMINESCENCE SPECTROSCOPY; STATISTICAL MECHANICS; TEMPERATURE DISTRIBUTION;

ENERGY GAP;

EID: 84858378516 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3691955 Document Type: Article

Times cited : (13)

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