Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 46-48

  Boucaud, P ^a   El Kurdi, M ^a   Hartmann, J M ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ENERGY GAP; HETEROJUNCTIONS; PHONONS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STACKING FAULTS;

BUFFER LAYERS; EXCITATION DENSITIES; POWER EXCITATION DENSITY; RADIATIVE RECOMBINATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3242673561     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766073     Document Type: Article

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