Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Journal of Crystal Growth

Volumn 343, Issue 1, 2012, Pages 105-109

  Jun, Kawano ^a,d   Yoshihiro, Kangawa ^a   Tomonori, Ito ^b   Koichi, Kakimoto ^a   Akinori, Koukitu ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Thermodynamic analysis; A3. Vapor phase epitaxy; B1. GaAsN; B2. Semiconducting IIIV materials; B3. Solar cells

Indexed keywords

EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; NITROGEN; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMODYNAMICS; VAPOR PHASE EPITAXY;

B1. GAASN; CALCULATION RESULTS; GAS PARTIAL PRESSURE; PARTIAL PRESSURE RATIO; SEMI CONDUCTING III-V MATERIALS; SOLID COMPOSITION; THERMO DYNAMIC ANALYSIS; TRIMETHYL GALLIUM;

LATTICE MISMATCH;

EID: 84857993093     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.079     Document Type: Article

References (22)

1. H.S. Lee, K. Nishimura, Y. Yagi, M. Tachibana, N.J. Ekins-Daukes, Y. Ohshita, N. Kojima, and M. Yamaguchi Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells Journal of Crystal Growth 275 2005 e1127 e1130
2. P. Panpech, S. Vijarnwannaluk, S. Sanorpin, W. Ono, F. Nakajima, R. Katayama, and K. Onabe Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE Journal of Crystal Growth 298 2007 107 110 (Pubitemid 46157235)
3. H. Suzuki, K. Nishimura, H.S. Lee, Y. Ohshita, N. Kojima, and M. Yamaguchi Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source Thin Solid Films 515 2007 5008 5011 (Pubitemid 46399868)
4. K. Saito, K. Nishimura, H. Suzuki, Y. Ohshita, and M. Yamaguchi Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy Thin Solid Films 516 2008 3517 3520 (Pubitemid 351374973)
5. x films during chemical beam epitaxy growth Journal of Crystal Growth 311 2009 2821 2824
6. 0.005 homo-junction solar cell Current Applied Physics 10 2010 S188 S190
7. D.J. Friedman, J.F. Geisz, S.R. Kurtz, and J.M. Olson 1-eV solar cells with GaInNAs active layer Journal of Crystal Growth 195 1998 409 415 (Pubitemid 128409107)
8. S.R. Kurtz, A.A. Allerman, E.D. Jones, J.M. Gee, J.J. Banas, and B.E. Hammons InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs Applied Physics Letters 74 1999 729 731 (Pubitemid 129615163)
9. S.R. Kurtz, J.F. Klem, A.A. Allerman, R.M. Sieg, C.H. Seager, and E.D. Jones Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy Applied Physics Letters 80 2002 1379 1381
10. I. Ho, and G.B. Stringfellow Solubility of nitrogen in binary IIIV systems Journal of Crystal Growth 178 1997 1 7 (Pubitemid 127393860)
11. K. Onabe, D. Aoki, J. Wu, H. Yaguchi, and Y. Shiraki MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations Physics Status Solidi (a) 176 1999 231 235 (Pubitemid 32081975)
12. 1-y including strain effects Journal of Crystal Growth 196 1999 67 70
13. A. Koukitu, and H. Seki Thermodynamic analysis for InGaAsP epitaxial growth by the chlorideCVD process Journal of Crystal Growth 49 1980 325 333
14. H. Seki, and A. Koukitu Thermodynamic analysis of molecular beam epitaxy of IIIV semiconductors Journal of Crystal Growth 78 1986 342 352
15. A. Koukitu, Y. Hasegawa, and H. Seki Thermodynamic analysis of the MOVPE and MBE growth of pentanary IIIV alloy semiconductors Journal of Crystal Growth 98 1989 697 703 (Pubitemid 20645666)
16. 1-xN Journal of Crystal Growth 170 1997 306 311 (Pubitemid 127392581)
17. 1-x Journal of Crystal Growth 258 2003 277
18. x alloys Physical Review B 51 1995 10568 10571
19. T. Yayama, Y. Kangawa, K. Kakimoto, and A. Koukitu Method for theoretical prediction of indium composition in coherently grown InGaN thin films Japanese Journal of Applied Physics 48 2009 088004 088006
20. T. Ito, N. Takasu, T. Akiyama, and K. Nakamura Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films Applied Surface Science 256 2009 1218 1221
21. 1-xN grown on GaN and InN Journal of Crystal Growth 220 2000 401 404 (Pubitemid 32071160)
22. K. Pakula, J.M. Baranowski, and J. Borysiuk Review: two- and three-dimensional growth modes of nitride layers Crystal Research and Technology 42 2007 1176 1184 (Pubitemid 350254260)