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Volumn 311, Issue 10, 2009, Pages 2821-2824

Flow modulation effect on N incorporation into GaAs(1 - x) Nx films during chemical beam epitaxy growth

(6) Suzuki, H a Nishimura, K a Saito, K a Ohshita, Y a Kojima, N a Yamaguchi, M a

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

A1. Adsorption; A1. Desorption; A3. Chemical beam epitaxy; B1. Nitrides; B2. Semiconducting III V material; B3. Solar cells

Indexed keywords

A1. ADSORPTION; A1. DESORPTION; A3. CHEMICAL BEAM EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIAL; B3. SOLAR CELLS;

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DESORPTION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GAS ABSORPTION; GASES; NITRIDES; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SOLAR CELLS; SURFACES;

CHEMICAL BEAM EPITAXY;

EID: 65749109750 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.020 Document Type: Article

Times cited : (6)

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