Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 5008-5011

  Suzuki, H ^a   Nishimura, K ^a   Lee, H S ^a   Ohshita, Y ^a   Kojima, N ^a   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Chemical beam epitaxy; Gallium arsenide nitride; Impurities; Temperature programmed desorption

Indexed keywords

CHEMICAL BEAM EPITAXY; FILM GROWTH; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE REACTIONS; TEMPERATURE PROGRAMMED DESORPTION;

GALLIUM ARSENIDE NITRIDE; LOW TEMPERATURE GROWTH;

THIN FILMS;

EID: 33947120600     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.041     Document Type: Article

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