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Crystal Research and Technology

Volumn 42, Issue 12, 2007, Pages 1176-1184

Review: Two- and three-dimensional growth modes of nitride layers

(3) Pakul K a Baranowski, J M a Borysiuk, J b

a UNIVERSITY OF WARSAW (Poland)

b ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

Author keywords

Dislocations; MOVPE; Nitride

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CRYSTAL GROWTH; CRYSTALLITES; DISLOCATIONS (CRYSTALS); NUCLEATION;

NUCLEATION LAYER; QUANTITY OF DISLOCATIONS; SUCCESSIVE GROWTH; SURFACE RETAINING;

NITRIDES;

EID: 37149008865 PISSN: 02321300 EISSN: 15214079 Source Type: Journal
DOI: 10.1002/crat.200711003 Document Type: Conference Paper

Times cited : (8)

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