Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell

Current Applied Physics

Volumn 10, Issue 2 SUPPL., 2010, Pages

  Bouzazi, Boussairi ^a   Nishimura, Kenichi ^a   Suzuki, Hidetoshi ^a   Kojima, Nobuaki ^a   Ohshita, Yoshio ^a   Yamaguchi, Masafumi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Chemical Beam Epitaxy; InGaAsN; Minority carrier diffusion length

Indexed keywords

DONOR STATE; GAAS; HOMOJUNCTION; INGAASN; MAJORITY CARRIERS; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE;

CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HOLE TRAPS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

CHEMICAL BEAM EPITAXY;

EID: 77949569533     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.11.020     Document Type: Article

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