Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 107-110

  Panpech, P ^a   Vijarnwannaluk, S ^a   Sanorpim, S ^a   Ono, W ^b   Nakajima, F ^b   Katayama, R ^b   Onabe, K ^b  

^a CHULALONGKORN UNIVERSITY   (Thailand)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Compositional analysis; A1. High resolution X ray diffraction; A3. MOVPE; B1. GaAsN alloys; B1. III V nitrides; B2. Semiconducting ternary compounds

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; TERNARY SYSTEMS; THIN FILMS; VIBRATION CONTROL; X RAY DIFFRACTION ANALYSIS;

COMPOSITIONAL ANALYSIS; GAASN ALLOYS; HIGH-RESOLUTION X-RAY DIFFRACTION; III-V-NITRIDES; SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33846539312     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.009     Document Type: Article

References (10)

1. Kondow M., Kitatani T., Nakatsuka S., Larson M.C., Nakahara K., Yazawa Y., and Okai M. IEEE J. Select. Topics Quantum Electron 3 (1997) 719
2. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., and Yazawa Y. Jpn. J. Appl. Phys. 35 (1996) 1273
3. Kurtz S.R., Allerman A.A., Jones E.D., Gee J.M., Banas J.J., and Hammons B.E. Appl. Phys. Lett. 74 (1999) 729
4. Seong M.J., Hanna M.C., and Mascarenhas A. Appl. Phys. Lett. 79 (2001) 3974
5. Srnanek R., Vincze A., Kovac J., Gregora I., Mc Phail D.S., and Gottschalch V. Mater. Sci. Eng. B 91 (2002) 87
6. Uesugi K., Morooka N., and Suemune I. Appl. Phys. Lett. 74 9 (1999) 1254
7. F. Nakajima, S. Sanorpim, W. Ono, R. Katayama, K. Onabe, Phys. Stat. Sol. a 203(2006) 1641.
8. Mintairov A.M., Blagnov P.A., Melehin V.G., Faleev N.N., Merz J.L., Qiu Y., Nikishin S.A., and Temkin H. Phys. Rev. B 56 24 (1997) 15836
9. Serries D., Geppert T., Kohler K., Ganser P., and Wagner J. Mat. Res. Soc. Proc. 744 (2003) M10.2.1
10. Alt H.ch., Egorov A.Yu., Riechert H., Wiedemann B., Meyer J.D., Michelmann R.W., and Bethge K. Physica B 302-303 (2001) 282