An empirical potential approach to structural stability of GaN xAs1-x

Journal of Crystal Growth

Volumn 258, Issue 3-4, 2003, Pages 277-282

  Suda, Takashi ^a   Kangawa, Yoshihiro ^b   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Computer simulation; A1. Phase equilibria; B2. Semiconducting materials

Indexed keywords

COMPUTER SIMULATION; ELECTROSTATICS; OPTICAL DEVICES; PHASE EQUILIBRIA; PHASE TRANSITIONS;

IONIC CHARGES;

GALLIUM NITRIDE;

EID: 0141707778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01556-2     Document Type: Article

References (14)

1. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., Yazawa Y. Jpn. J. Appl. Phys. 35:1996;1273.
2. Neugebauer J., Van de Walle C.G. Phys. Rev. B. 51:1995;10568.
3. Foxon C.T., Cheng T.S., Novikov S.V., Lacklison D.E., Jenkins L.C., Johnston D., Orton J.W., Hooper S.E., Babaali N., Tansley T.L., Tret'yakov V.V. J. Crystal Growth. 150:1995;892.
4. Bi W.G., Tu C.W. Appl. Phys. Lett. 70:1997;1608.
5. Kuroiwa R., Asahi H., Asami K., Kim S.J., Iwata K., Gonda S. Appl. Phys. Lett. 73:1998;2630.
6. Phillips J.C. Rev. Mod. Phys. 42:1970;317.
7. Zunger A. Phys. Rev. B. 22:1980;5839.
8. Ito T. Jpn. J. Appl. Phys. 37:1998;L1217.
9. Ito T., Shiraishi K., Taguchi A. J. Crystal Growth. 227-228:2001;366.
10. Ito T., Kangawa Y. J. Crystal Growth. 235:2002;149.
11. Ito T., Khor K.E., Das Sarma S. Phys. Rev. B. 41:1990;3893.
12. Ito T. J. Appl. Phys. 77:1995;4947.
13. Stringfellow G.B. J. Crystal Growth. 27:1974;21.
14. Kangawa Y., Ito T., Mori A., Koukitu A. J. Crystal Growth. 220:2000;401.