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Volumn 256, Issue 4, 2009, Pages 1218-1221
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Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films
a
MIE UNIVERSITY
(Japan)
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Author keywords
Empirical interatomic potential; GaN x As 1 x thin films; Lattice constraint; Layered segregation; Surface segregation; V grooved substrate
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Indexed keywords
ATOMS;
GALLIUM ALLOYS;
INTELLIGENT SYSTEMS;
LATTICE MISMATCH;
MONTE CARLO METHODS;
SEMICONDUCTOR ALLOYS;
SUBSTRATES;
SURFACE SEGREGATION;
VANADIUM ALLOYS;
ZINC SULFIDE;
ALLOY SEMICONDUCTORS;
ATOMIC ARRANGEMENT;
GANXAS1-X;
INTERATOMIC POTENTIAL;
LARGE LATTICE MISMATCH;
LATTICE CONSTRAINT;
ORDERED STRUCTURES;
THEORETICAL INVESTIGATIONS;
THIN FILMS;
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EID: 70749117784
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.05.067 Document Type: Article |
Times cited : (5)
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References (20)
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