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Volumn 516, Issue 11, 2008, Pages 3517-3520
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Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy
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Author keywords
Chemical beam epitaxy; Flow rate modulated chemical beam epitaxy; Gallium arsenide nitride; Residual hydrogen
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Indexed keywords
CHEMICAL BEAM EPITAXY;
FLOW RATE;
MODULATION;
SEMICONDUCTING GALLIUM ARSENIDE;
FLOW RATE MODULATED CHEMICAL BEAM EPITAXY;
MODULATION GROWTH;
THIN FILMS;
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EID: 40649087854
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2007.08.022 Document Type: Article |
Times cited : (17)
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References (12)
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