메뉴 건너뛰기




Volumn 516, Issue 11, 2008, Pages 3517-3520

Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

Author keywords

Chemical beam epitaxy; Flow rate modulated chemical beam epitaxy; Gallium arsenide nitride; Residual hydrogen

Indexed keywords

CHEMICAL BEAM EPITAXY; FLOW RATE; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40649087854     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.022     Document Type: Article
Times cited : (17)

References (12)
  • 6
    • 40649099975 scopus 로고    scopus 로고
    • T. Imai, private commun.
    • T. Imai, private commun.
  • 12
    • 40649104241 scopus 로고    scopus 로고
    • K. Nishimura, H.S. Lee, H. Suzuki, Y. Ohshita, M. Yamaguchi, Jpn. J. Appl. Phys. (in press).
    • K. Nishimura, H.S. Lee, H. Suzuki, Y. Ohshita, M. Yamaguchi, Jpn. J. Appl. Phys. (in press).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.