Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Lee, Hae Seok ^a   Nishimura, K ^a   Yagi, Y ^a   Tachibana, M ^a   Ekins Daukes, N J ^a   Ohshita, Y ^a   Kojima, N ^a   Yamaguchi, M ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

A1. X ray diffraction; A3. Chemical beam epitaxy; B1. Nitrides; B3. Solar cells

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; DECOMPOSITION; FILM GROWTH; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SOLAR CELLS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CARBON CONCENTRATION; DECOMPOSITION PROCESS; PRECURSORS; RESIDUAL CARBON;

THIN FILMS;

EID: 15844416855     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.200     Document Type: Conference Paper

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