The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon

Journal of Crystal Growth

Volumn 321, Issue 1, 2011, Pages 24-28

  Arivanandhan, Mukannan ^a   Gotoh, Raira ^b   Fujiwara, Kozo ^b   Ozawa, Tetsuo ^c   Hayakawa, Yasuhiro ^a   Uda, Satoshi ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SHIZUOKA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A1. Codoping; A1. Point defects; A2. Czochralski method; B2. Semiconductor silicon

Indexed keywords

A1. POINT DEFECTS; A2. CZOCHRALSKI METHOD; B2. SEMICONDUCTOR SILICON; CO-DOPED; CO-DOPING; CZOCHRALSKI; ENERGY DISPERSIVE X-RAY; ETCHED SURFACE; GA-DOPED; GE CONCENTRATIONS; HETEROGENEOUS NUCLEATION; INTERSTITIAL OXYGEN; SI CRYSTALS;

CONCENTRATION (PROCESS); DOPING (ADDITIVES); GERMANIUM; OXYGEN; POINT DEFECTS; PRECIPITATES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 79953236491     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.02.028     Document Type: Article

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