Oxygen and carbon precipitation in multicrystalline solar silicon

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 175-189

  Moller H J ^a   Long, L ^a   Werner, M ^b   Yang, D ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); SILICA; SILICON CARBIDE;

FOCKER-PLANCK EQUATION;

SILICON SOLAR CELLS;

EID: 0032738588     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<175::AID-PSSA175>3.0.CO;2-Q     Document Type: Article

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