Modelling lifetime degradation in boron-doped Czochralski silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 3, 2011, Pages 576-579

  Voronkov, Vladimir V ^a   Falster, Robert ^a   Batunina, Anna V ^b  

^a MEMC Electronic Materials   (Italy)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

boron; lifetime degradation; oxygen; silicon

Indexed keywords

BORON ATOM; BORON-DOPED; CZOCHRALSKI SILICON; ELECTRON LIFETIME; EXCESS ELECTRONS; ILLUMINATION INTENSITY; INTERSTITIAL BORON; LIFETIME DEGRADATION; NEUTRAL STATE; NEW MODEL; OXYGEN DIMERS; RECOMBINATION CENTRES;

DEGRADATION; OXYGEN;

BORON;

EID: 79952490976     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000191     Document Type: Article

References (9)

1. S. W. Glunz, S. Rein, J. Y. Lee, and, W. Warta, J. Appl. Phys. 90, 2397 (2001).
2. K. Bothe, and, J. Schmidt, J. Appl. Phys. 99, 013701 (2006).
3. D. W. Palmer, K. Bothe, and, J. Schmidt, Phys. Rev. B 76, 035210 (2007).
4. D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and, L. J. Geerligs, J. Appl. Phys. 105, 093704 (2009).
5. V. V. Voronkov, and, R. Falster, J. Appl. Phys. 107, 053509 (2010).
6. J. Schmidt, A. G. Aberle, and, R. Hezel, in: Proceedings of the 26th Photo-voltaic Specialist Conference (IEEE, New York, 1997), p. 13.
7. J. Schmidt, and, K. Bothe, Phys. Rev. B 69, 024107 (2004).
8. V. V. Voronkov, G. I. Voronkova, A. V. Batunina, and, R. Falster, in: High Purity Silicon Vol. X, edited by, B. O. Kolbesen, C. L. Claeys, L. Fabri, M. Sarsani, O. Giubertoni, and, G. Pepponi, (ECS Trans., ALTECH, Pennington, NJ, 2009), p. 25.
9. J. S. Blackmore, Semiconductor Statistics (Pergamon, NewYork, 1962).