SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 7, 2009, Pages

High minority carrier lifetime in Ga-doped Czochralski-grown silicon by Ge codoping

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM; GERMANIUM; OXYGEN; SILICON;

AS-GROWN; CO-DOPED; CO-DOPING; CZOCHRALSKI; ETCH PIT DENSITIES; GA-DOPED; GE CONCENTRATIONS; GROWN-IN MICRODEFECTS; MINORITY CARRIER LIFETIMES;

CARRIER LIFETIME;

EID: 60749111867 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3085959 Document Type: Article

Times cited : (11)

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