Film-thickness-dependent conduction in ordered Si quantum dot arrays

Nanotechnology

Volumn 23, Issue 10, 2012, Pages

  Surana, K ^a   Lepage, H ^a   Lebrun, J M ^b   Doisneau, B ^c   Bellet, D ^d   Vandroux, L ^a   Le Carval, G ^a   Baudrit, M ^b   Thony, P ^b   Mur, P ^a  

^a CEA LETI   (France)

^b CEA Liten Ines   (France)

^c UNIV GRENOBLE ALPES   (France)

^d LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP VALUES; BI-LAYER; CONDUCTION MECHANISM; CRYSTALLINITIES; CURRENT-VOLTAGE MEASUREMENTS; GRAZING INCIDENCE X-RAY DIFFRACTION; LOW TEMPERATURES; PHOTOCARRIER GENERATION; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; SI QUANTUM DOT; SILICON NANOSTRUCTURES; SILICON QUANTUM DOTS; SILICON-RICH OXIDE; SINGLE LAYER; TEMPERATURE DEPENDENT;

DIELECTRIC MATERIALS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM DOTS; SILICA; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON OXIDES;

EID: 84857591582     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/10/105401     Document Type: Article

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