Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides

Nanotechnology

Volumn 18, Issue 31, 2007, Pages

  Carroll, M S ^a   Brewer, L ^a   Verley, J C ^a   Banks, J ^a   Sheng, J J ^a   Pan, W ^a   Dunn, R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALS; PHASE SEPARATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

DIFFUSION LENGTH; SILICON RICH OXIDES (SRO); STOICHIOMETRIC OXIDE;

CRYSTAL GROWTH;

NANOCRYSTAL; OXIDE; SILICON;

ANALYTIC METHOD; ARTICLE; CHEMICAL ANALYSIS; CRYSTALLIZATION; DIFFUSION; ELLIPSOMETRY; INFRARED SPECTROSCOPY; LIGHT SCATTERING; MASS SPECTROMETRY; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEPARATION TECHNIQUE; STOICHIOMETRY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34547135700     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/31/315707     Document Type: Article

References (15)

1. Ammendola G, Vulpio M, Bileci M, Nastasi N, Gerardi C, Renna G, Crupi I, Nicotra G and Lombardo S 2002 J. Vac. Sci. Technol. B 20 2075
2. Brongersma M L, Kik P G, Polman A, Min K S and Atwater H A 2000 Appl. Phys. Lett. 76 351
3. Wang Y Q, Smirani R and Ross G G 2004 Nano Lett. 4 2041
4. Lander J J and Morrison J 1982 J. Appl. Phys. 33 1300
5. Smith F W and Ghidini G 1982 J. Electrochem. Soc. 128 1300
6. Eaglesham D J, Stolk P A, Gossmann H-J and Poate J M 1994 Appl. Phys. Lett. 65 2305
7. Ultima HDP-CVD, Centura Platform: Applied Materials. See Applied Materials Web-site - ref-separator -
8. Frost M R, Harrington W L, Downey D F and Walther S R 1996 J. Vac. Sci. Technol. B 14 329
9. Meyer F, White J B and Radle M 1999 Semicond. Int. 22 125
10. Pai P G, Chao S S, Takagi Y and Lucovsky G 1986 J. Vac. Sci. Technol. A 4 689
11. Gaillard F, Schiavone P and Brault P 1997 J. Vac. Sci. Technol. A 15 2777
12. Fitch J T, Lucovsky G, Kobeda E and Irene E A 1989 J. Vac. Sci. Technol. B 7 153
13. Sauer R, Weber J, Stolz J, Weber E R, Kusters K-H and Alexander H 1984 Appl. Phys. A 36 1
14. Pan W, Dunn R, Carroll M S, Brewer L and Banks J 2007 Materials Research Symposium (San Francisco, CA, Spring 2007)
15. Nesbit L A 1984 Appl. Phys. Lett. 46 38