Charge transport in ultrathin silicon rich oxide/SiO2 multilayers under solar light illumination and in dark conditions

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Puglisi, R A ^a   Vecchio, C ^a   Lombardo, S ^a   Lorenti, S ^b   Camalleri, M C ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; CURRENT TRANSPORT; DARK CONDITIONS; EFFECTIVE ENERGY; ELECTRICAL DATA; ELECTRICAL PROPERTY; FREE ELECTRON; G-CONDITION; PHOTO-CARRIERS; PHOTOCARRIER GENERATION; SI NANOCRYSTAL; SOLAR LIGHT; SOLAR SPECTRUM; THERMAL-ANNEALING; TUNNEL EFFECT; ULTRATHIN SILICON;

CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PHOTOELECTRICITY; SILICON COMPOUNDS; SILICON OXIDES;

NANOCRYSTALS;

EID: 77955787269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463381     Document Type: Article

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